PART |
Description |
Maker |
DP100S |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
DP030S |
Extremely low collector-to-emitter saturation voltage 极低的集电极到发射极饱和电压
|
AUK, Corp. AUK[AUK corp]
|
DP500 |
PNP Silicon Transistor (Extremely low collector-to-emitter saturation voltage)
|
AUK[AUK corp]
|
DP100 |
Extremely low collector-to-emitter saturation voltage PNP Silicon Transistor
|
KODENSHI KOREA CORP. AUK corp
|
DP030 |
-300 mA, PNP silicon transistor Extremely low collector-to-emitter saturation voltage
|
AUK[AUK corp] KODENSHI KOREA CORP.
|
DP500F |
PNP Silicon Transistor (Extremely low collector-to-emitter saturation voltage)
|
AUK[AUK corp]
|
SMBTA1407 |
NPN Silicon Darlington Transistor High collector current Low collector-emitter saturation voltage
|
http://
|
PMF370XN |
N-channel mTrenchMOS extremely low level FET N-channel uTrenchmos (tm) extremely low level FET
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
2SB564A |
Audio frequency power amplifier. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 800mW. Collector current Ic = -1.0A.
|
USHA India LTD
|
IPW65R041CFD |
extremely low losses due to very low fom rdson qg and eoss
|
Infineon Technologies AG
|
ASM3P2872A ASM3P2872AF-06OR |
3.3 V, 15 MHz to 30 MHz, low power peak EMI reduction solution From old datasheet system The el-EMI-nator? Series for Low-Power
|
Alliance Semiconductor ALSC
|